Method of wet cleaning a surface, especially of a material of the silicon-germanium type

US7250085B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Alexandra Abbadie · Le Versoud, FR
• Pascal Besson · Gap, FR
• Marie-Noelle Semeria · Grenoble, FR

Key dates

• Filing date: Dec 29, 2004
• Grant date: Jul 31, 2007
• Expiry date: Dec 29, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S134/902
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.