Method and system for optically enhanced metal planarization
US7250104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2003 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Jul 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32125
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation, deposition into the features to achieve, for example, a planar surface profile. A further exemplary process is radiation assisted electrochemical removal of material, which produces an adsorbate layer in the features to suppress removal of material from the features and to encourage, through charge conservation, removal of material outside of the features so that, for example, a planar surface profile is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.