Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof
US7250320B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2004 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Nov 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.