Semiconductor device
US7250799B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 19, 2005 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | May 17, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a blind scheme for boosting an internal voltage using an external supply voltage is disclosed. The semiconductor device includes a voltage detector for detecting a voltage level of the external supply voltage being applied to the semiconductor device, a pulse generator for being controlled by a logic level value output from the voltage detector and generating a pulse signal having a variable pulse width, an internal voltage generator for generating the internal voltage for driving an internal circuit of the semiconductor device, and a driving unit for providing the external supply voltage to an output terminal of the internal voltage generator that outputs the internal voltage in response to the pulse signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.