Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
US7252718B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2003 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Apr 5, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for the cleaning of residues from substrates can contain from about 0.01 percent by weight to about 5 percent by weight of one or more fluoride compounds, from about 20 percent by weight to about 50 percent by weight water, from about 20 percent by weight to about 80 percent by weight of an organic amide solvent and from 0 to about 50 weight percent of an organic sulfoxide solvent. The composition can have a pH between about 7 and about 10, alternately from greater than 8 to about 10. Additionally, the composition optionally can contain corrosion inhibitors, chelating agents, surfactants, acids, and/or bases. In use of the composition, a substrate can advantageously be contacted with the composition for a time and at a temperature that permits cleaning of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.