Manufacturable CoWP metal cap process for copper interconnects
US7253106B2 · kind B2 · utility
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11References
41Claims
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Key dates
| Filing date | Dec 22, 2004 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Dec 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method to electrolessly plate a CoWP alloy on copper in a reproducible manner that is effective for a manufacturable process. In the method, a seed layer of palladium (Pd) is deposited on the copper by an aqueous seeding solution of palladium acetate, acetic acid and chloride. Thereafter, a complexing solution is applied to remove any Pd ions which are adsorbed on surfaces other than the copper. Finally, a plating solution of cobalt (Co), tungsten (W) and phosphorous (P) is applied to the copper so as to deposit a layer of CoWP on the Pd seed and copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.