Process for forming a thin film of TiSiN, in particular for phase change memory devices
US7253108B2 · kind B2 · utility
12Cited by
3References
21Claims
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Key dates
| Filing date | May 25, 2004 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Apr 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH4) and dichlorosilane (SiH2Cl2) at 10-90 sccm—standard cube centimeters per minute—for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H2/N2 plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.