Barrier polishing solution

US7253111B2 · kind B2 · utility

Assignee

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US

Inventors

• Zhendong Liu · Newark, US
• John Francis Quanci · Haddonfield, US
• Robert Schmidt · Bear, US
• Terence M. Thomas · Newark, US

Key dates

• Filing date: Apr 21, 2004
• Grant date: Aug 7, 2007
• Expiry date: Jul 14, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.