Current sensor having hall element
US7253601B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 8, 2006 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R15/202
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A current sensor includes: a current path; a semiconductor substrate; and a Hall element on the substrate. The Hall element detects a magnetic flux in a magnetic field caused by a detection object current. The Hall element generates a Hall voltage corresponding to the magnetic flux when a driving current flowing in a direction perpendicular to the semiconductor substrate is supplied to the Hall element, and when the magnetic flux having a component parallel to the semiconductor substrate affects the Hall element. The current path is disposed on the semiconductor substrate. The current path is electrically isolated from the Hall element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.