Active matrix display device with active element including a semiconductor film formed of an aggregate of single crystals each extending in the same direction
US7253864B2 · kind B2 · utility
9Cited by
12References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2005 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Oct 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.