Iridium oxide nanowires and method for forming same
US7255745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Oct 27, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/811
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Iridium oxide (IrOx) nanowires and a method forming the nanowires are provided. The method comprises: providing a growth promotion film with non-continuous surfaces, having a thickness in the range of 0.5 to 5 nanometers (nm), and made from a material such as Ti, Co, Ni, Au, Ta, polycrystalline silicon (poly-Si), SiGe, Pt, Ir, TiN, or TaN; establishing a substrate temperature in the range of 200 to 600 degrees C.; introducing oxygen as a precursor reaction gas; introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor; using a metalorganic chemical vapor deposition (MOCVD) process, growing IrOx nanowires from the growth promotion film surfaces. The IrOx nanowires have a diameter in the range of 100 to 1000 Å, a length in the range of 1000 Å to 2 microns, an aspect ratio (length to width) of greater than 50:1. Further, the nanowires include single-crystal nanowire cores covered with an amorphous layer having a thickness of less than 10 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.