High pressure processing chamber for semiconductor substrate
US7255772B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Sep 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.