Systems and methods for synthesis of gallium nitride powders
US7255844B2 · kind B2 · utility
5Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Nov 24, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Jul 20, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/62
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and to a full reaction, yielding high purity crystalline GaN powders with a stoichiometric nitrogen concentration and a hexagonal wurtzite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.