Alan C. Thomas
27Patents
6h-index
63Co-inventors
72Inventor score
Filing activity: Aug 10, 1988 → Sep 27, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5618751A | Method of making single-step trenches using resist fill and recess | Emerging Cross-Sectional Technologies | 81 | Expired |
| US5953128A | Optically measurable serpentine edge tone reversed targets | Physics | 53 | Expired |
| US4853594A | Electroluminescent lamp | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6451508B1 | Plural interleaved exposure process for increased feature aspect ratio in dense arrays | Physics | 12 | Expired |
| US6372408B1 | Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles | Physics | 6 | Expired |
| US6420101B1 | Method of reducing post-development defects in and around openings formed in photoresist by use of non-patterned exposure | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7255844B2 | Systems and methods for synthesis of gallium nitride powders | Chemistry; Metallurgy | 5 | Expired |
| US6268907A | Elimination of standing waves in photoresist | Physics | 5 | Expired |
| US6611109B2 | Infrared emitting EL lamp | Mechanical Engineering; Lighting; Heating | 5 | Expired |
| US7742125B2 | Light switch having plural shutters | Electricity | 3 | Active |
| US8421755B2 | Capacitive touch sensor with integral EL backlight | Physics | 3 | Active |
| US6436585B1 | Method of using optical proximity effects to create electrically blown fuses with sub-critical dimension neck downs | Electricity | 3 | Expired |
| US8242525B2 | Silicate-based phosphors and LED lighting devices using the same | Emerging Cross-Sectional Technologies | 3 | Active |
| US6427090B1 | Requalification controller for durables | Emerging Cross-Sectional Technologies | 3 | Expired |
| US10177287B1 | Gamut broadened displays with narrow band green phosphors | Electricity | 3 | Active |
| US6303275A | Method for resist filling and planarization of high aspect ratio features | Physics | 2 | Expired |
| US6594817B2 | Reticle exposure matrix | Physics | 2 | Expired |
| US6842222B2 | Method of reducing pitch on semiconductor wafer | Physics | 2 | Expired |
| US10832971B2 | Fabricating tapered semiconductor devices | Electricity | 1 | Active |
| US9200199B1 | Inorganic red phosphor and lighting devices comprising same | Electricity | 1 | Active |
| US7238535B2 | Test cell for evaluating phosphor | Physics | 1 | Expired |
| US8801969B2 | Carbonitride and carbidonitride phosphors and lighting devices using the same | Electricity | 0 | Active |
| US9315725B2 | Method of making EU2+ activated inorganic red phosphor | Chemistry; Metallurgy | 0 | Active |
| US10748823B2 | Embedded etch rate reference layer for enhanced etch time precision | Electricity | 0 | Active |
| US9200198B1 | Inorganic phosphor and light emitting devices comprising same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.