Photoresist composition for imaging thick films
US7255970B2 · kind B2 · utility
7Cited by
19References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Jul 12, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/127
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides for a light-sensitive photoresist composition useful for imaging thick films, comprising a polymer which is insoluble in an aqueous alkali developer but becomes soluble prior to development, a photoacid generator which produces a strong acid upon irradiation and a photobleachable dye. The invention further provides for a process for imaging the photoresist of the present invention, especially where the thickness of the photoresist is up to 200 microns and where the process comprises a single exposure step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.