Production method for semiconductor device
US7256082B2 · kind B2 · utility
1Cited by
6References
9Claims
0Family size
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Key dates
| Filing date | Sep 10, 2002 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Sep 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film, silicon nitride film or silicon oxide nitride film or the like on a silicon oxide substrate, and following formation of the gate insulation film on the silicon oxide substrate with heat treatment for a given time at a temperature range of 900° C. to 1000° C. in an atmosphere containing not less than 25% H2O (water).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.