Substrate manufacturing method and substrate processing apparatus
US7256104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Oct 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.