Method to eliminate plating copper defect
US7256120B2 · kind B2 · utility
5Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Jul 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76876
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.