Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
US7256130B2 · kind B2 · utility
3Cited by
8References
28Claims
0Family size
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Key dates
| Filing date | Apr 30, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Apr 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide material layer and an AlCu layer, the AlCu layer is etched first using a chlorine based plasma at a higher temperature; then the lateral walls of the AlCu layer are passivated; and then the chalcogenide material layer is etched at a lower temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.