Method of controlling the critical dimension of structures formed on a substrate
US7256131B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 19, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Jul 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0272
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of patterning a substrate, the method including, inter alia, forming a multi-layered structure on the substrate formed from first, second and third materials. The first, second and third materials are exposed to an etch chemistry, with the first and second materials having a common etch rate along a first direction, defining a first etch rate, and the first and third materials having a similar etch rate along a second direction, transversely extending to the first direction, defining a second etch rate. Typically, the etch rate is selected to be different in furtherance of facilitating control of the dimensions of features formed during the etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.