Method for treating a wafer edge
US7256148B2 · kind B2 · utility
14Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | May 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the wafer surface only on the edge portion that is being treated. Alternatively, the method may be utilized to effectuate a cleaning of an edge portion of a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.