Andreas Knorr
66Patents
17h-index
87Co-inventors
87Inventor score
Filing activity: May 7, 1993 → Aug 23, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6531377B2 | Method for high aspect ratio gap fill using sequential HDP-CVD | Electricity | 163 | Expired |
| US9245885B1 | Methods of forming lateral and vertical FinFET devices and the resulting product | Electricity | 54 | Active |
| US8048790B2 | Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration | Emerging Cross-Sectional Technologies | 52 | Active |
| US7273638B2 | High density plasma oxidation | Electricity | 37 | Expired |
| US6294423A | Method for forming and filling isolation trenches | Electricity | 27 | Expired |
| US6706634B1 | Control of separation between transfer gate and storage node in vertical DRAM | Electricity | 24 | Expired |
| US9147748B1 | Methods of forming replacement spacer structures on semiconductor devices | Electricity | 24 | Active |
| US8039326B2 | Methods for fabricating bulk FinFET devices having deep trench isolation | Electricity | 24 | Active |
| US6821865B2 | Deep isolation trenches | Electricity | 22 | Expired |
| US6566228B1 | Trench isolation processes using polysilicon-assisted fill | Electricity | 21 | Expired |
| US9929157B1 | Tall single-fin fin-type field effect transistor structures and methods | Electricity | 21 | Active |
| US6437401B1 | Structure and method for improved isolation in trench storage cells | Electricity | 20 | Expired |
| US9691897B2 | Three-dimensional semiconductor transistor with gate contact in active region | Electricity | 20 | Active |
| US9147730B2 | Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process | Electricity | 19 | Active |
| US5630903A | Machine for the manufacture of a single-face lined web of corrugated board | Emerging Cross-Sectional Technologies | 19 | Expired |
| US7626257B2 | Semiconductor devices and methods of manufacture thereof | Electricity | 19 | Expired |
| US9780178B2 | Methods of forming a gate contact above an active region of a semiconductor device | Electricity | 17 | Active |
| US6890833B2 | Trench isolation employing a doped oxide trench fill | Electricity | 15 | Expired |
| US7256148B2 | Method for treating a wafer edge | Electricity | 14 | Expired |
| US9318342B2 | Methods of removing fins for finfet semiconductor devices | Electricity | 13 | Active |
| US10304833B1 | Method of forming complementary nano-sheet/wire transistor devices with same depth contacts | Electricity | 13 | Active |
| US9576857B1 | Method and structure for SRB elastic relaxation | Electricity | 11 | Active |
| US9614056B2 | Methods of forming a tri-gate FinFET device | Electricity | 11 | Active |
| US5632850A | Machine for the manufacture of a web of at least single-face corrugated board | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5906305A | Apparatus for the corrective positioning of a travelling web at right angles to the direction of travel | Performing Operations; Transporting | 10 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.