Type II quantum well mid-infrared optoelectronic devices
US7256417B2 · kind B2 · utility
12Cited by
5References
60Claims
0Family size
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Key dates
| Filing date | Feb 5, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Jun 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor optoelectronic devices such as diode lasers are formed on InP substrates with an active region with an InAsN or InGaAsN electron quantum well layer and a GaAsSb or InGaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.