Thin film semiconductor device
US7256423B2 · kind B2 · utility
1Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Jul 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.