Method of fabricating a diaphragm of a capacitive microphone device
US7258806B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2006 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Jun 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R19/04
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a diaphragm of a capacitive microphone device. First, a substrate is provided, and a dielectric layer on a first surface of the substrate is formed. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and a diaphragm layer is formed on a surface of the silicon spacers and the surface of the dielectric layer. Subsequently, a planarization layer is formed on the diaphragm layer, and a second surface of the substrate is etched to form a plurality of openings corresponding to the diaphragm layer disposed on the surface of the dielectric layer. Thereafter, the dielectric layer exposed through the openings is removed, and planarization layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.