Forming phase change memory arrays
US7259023B2 · kind B2 · utility
13Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2004 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Jul 12, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
Abstract
A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.