Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products
US7259036B2 · kind B2 · utility
112Cited by
3References
40Claims
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Key dates
| Filing date | Feb 14, 2005 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Mar 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.