Semiconductor device and method of making the same
US7259050B2 · kind B2 · utility
66Cited by
10References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 29, 2004 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Jan 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
Abstract
A semiconductor device comprises a substrate, a gate disposed on the substrate, and a source and drain formed in the substrate on both sides of the gate. The device further comprises a thin spacer having a first layer and a second layer formed on the sidewalls of the gate, wherein the first and second layers have comparable wet etch rates of at least 10 Å per minute using the same etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.