Semiconductor laser device and method of fabricating the same
US7260130B2 · kind B2 · utility
3Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2004 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Feb 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.