CMOS image sensor and method of manufacturing same
US7262073B2 · kind B2 · utility
9Cited by
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19Claims
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Key dates
| Filing date | Aug 22, 2005 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Aug 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/024
Abstract
Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.
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