Duk-Min Yi
13Patents
6h-index
16Co-inventors
59Inventor score
Filing activity: May 8, 1992 → May 20, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7078775B2 | MOS transistor having a mesh-type gate electrode | Electricity | 15 | Expired |
| US7378694B2 | CMOS image sensor | Electricity | 10 | Expired |
| US6635536B2 | Method for manufacturing semiconductor memory device | Electricity | 10 | Expired |
| US7262073B2 | CMOS image sensor and method of manufacturing same | Electricity | 9 | Expired |
| US5328860A | Method of manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7612392B2 | Image sensor with a gate electrode between the photoelectric conversion region and the charge detection region, the gate electrode comprising p-type and n-type regions adjacent to one another and method of fabricating the same | Electricity | 7 | Active |
| US5278084A | Method of manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7875488B2 | Method of fabricating image sensor having inner lens | Electricity | 2 | Active |
| US7994551B2 | Image sensor and method of fabricating the same | Electricity | 2 | Active |
| US8017490B2 | Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers | Electricity | 2 | Active |
| US8067301B2 | Image sensor and method for forming the same | Electricity | 1 | Active |
| US7749852B2 | Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers | Electricity | 0 | Active |
| US7652312B2 | CMOS image sensor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.