Chemical etch solution and technique for imaging a device's shallow junction profile
US7262409B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jan 4, 2005 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Mar 18, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N1/32
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.