Insulating substrate, manufacturing method thereof, and module semiconductor device with insulating substrate
US7263766B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2003 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Oct 25, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating substrate (1) has insulative ceramic layers (2, 3) laid one upon another, an intermediate layer (4) made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer (5) joined to the top surface of a top one of the ceramic layers, and a second conductive layer (6) joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.