Photomask, and method and apparatus for producing the same
US7264905B2 · kind B2 · utility
5Cited by
5References
3Claims
0Family size
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Key dates
| Filing date | Nov 17, 2003 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Jun 4, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.