Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
US7265002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2005 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Feb 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method for making a semiconductor device may include providing a substrate, and forming at least one MOSFET adjacent the substrate by forming a superlattice including a plurality of stacked groups of layers and a semiconductor cap layer on an uppermost group of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming source, drain, and gate regions defining a channel through at least a portion of the semiconductor cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.