Laser beam processing method for a semiconductor wafer
US7265033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2004 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Jan 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser beam processing method for a semiconductor wafer having a low-dielectric insulating film formed on the front surface of a semiconductor substrate thereof, a plurality of circuits sectioned by streets into a lattice pattern, and metal patterns for testing formed partially on each street. The method includes a laser beam processing step for applying a laser beam to the positions of areas at which the metal patterns are located, and to the low-dielectric insulating film, under different processing conditions so as to remove the metal patterns and the low-dielectric insulating film without damaging the substrate and its circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.