Cleaning solution and method for selectively removing layer in a silicidation process
US7265040B2 · kind B2 · utility
3Cited by
4References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2003 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Jun 10, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning solution also effectively removes a photoresist layer and organic materials. Moreover, the cleaning solution can be employed in tungsten gate electrode technologies that have been spotlighted because of the capability to improve device operation characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.