CMP of copper/ruthenium substrates
US7265055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2005 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Nov 24, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/04
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.