Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
US7265950B2 · kind B2 · utility
6Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2004 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Oct 27, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/325
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.