Nonvolatile semiconductor memory and making method thereof
US7268042B2 · kind B2 · utility
7Cited by
5References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 7, 2004 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Sep 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A nonvolatile semiconductor memory device of a split gate structure having a gate of low resistance suitable to the arrangement of a memory cell array is provided. When being formed of a side wall spacer, a memory gate is formed of polycrystal silicon and then replaced with nickel silicide. Thus, its resistance can be lowered with no effect on the silicidation to the selection gate or the diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.