Light extraction from a semiconductor light emitting device via chip shaping
US7268371B2 · kind B2 · utility
66Cited by
49References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 19, 2005 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Nov 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.