Finfets having first and second gates of different resistivities
US7268396B2 · kind B2 · utility
9Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2004 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Jun 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A fin field effect transistor (FinFET) includes a first gate and a second gate. The first gate has a vertical part that is defined by sidewalls of a silicon fin and sidewalls of a capping pattern disposed on the silicon fin and a horizontal part horizontally extends from the vertical part. The second gate is made of a low-resistivity material and is in direct contact with the horizontal part of the first gate. A channel may be controlled due to the first gate, and a device operating speed may be enhanced due to the second gate. Related fabrication methods also are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.