Semiconductor device embedded with pressure sensor and manufacturing method thereof
US7270012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Sep 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.