Light-emitting device with a current blocking structure and method for making the same

US7271021B2 · kind B2 · utility

Assignee

• ATOMIC ENERGY COUNCIL—INSTITUTE OF NUCLEAR ENERGY RESEARCH · TW

Inventors

• Tsun-Neng Yang · Taipei, TW
• Shan-Ming Lan · Daxi District, TW

Key dates

• Filing date: Sep 28, 2005
• Grant date: Sep 18, 2007
• Expiry date: Apr 1, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8162

Abstract

A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure includes a bottom cladding layer, an upper cladding layer, a light-emitting layer positioned between the bottom and the upper cladding layer, a window layer positioned on the upper cladding layer and a contact layer positioned on the window layer. The current blocking structure can extend from the bottom surface of the ohmic contact electrode to the light-emitting layer. According to the present invention, at least one ionic implanting process is performed to implant at least one proton beam into the epitaxial structure to form the current blocking structure.