One-transistor random access memory technology compatible with metal gate process
US7271083B2 · kind B2 · utility
9Cited by
18References
21Claims
0Family size
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Key dates
| Filing date | Jul 22, 2004 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Feb 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
Abstract
One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.