Surface treated low-k dielectric as diffusion barrier for copper metallization
US7271103B2 · kind B2 · utility
5Cited by
7References
12Claims
0Family size
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Key dates
| Filing date | Oct 17, 2003 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | May 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Cu damascene structure is formed where Cu diffusion barrier is formed by treating the top surface of the surrounding low-k interlayer dielectric with nitrogen or carbon containing medium to form a silicon nitride or silicon carbide diffusion barrier rather than capping the top surface of the Cu with metal diffusion barrier as is conventionally done.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.