Neutron detection device and method of manufacture
US7271389B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2003 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Feb 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/29
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.