Group III-V nitride-based semiconductor substrate and method of making same
US7271404B2 · kind B2 · utility
2Cited by
2References
8Claims
0Family size
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Key dates
| Filing date | Dec 21, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Dec 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impurity concentration lower than the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.