Abrupt channel doping profile for fermi threshold field effect transistors
US7271457B2 · kind B2 · utility
4Cited by
18References
4Claims
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Key dates
| Filing date | Mar 4, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | May 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/314
Abstract
A Fermi threshold voltage FET has Germanium implanted to form a shallow abrupt transition between the semiconductor substrate dopant type, or well dopant type, and a counter doping layer of opposite type closely adjacent the surface of the semiconductor substrate. Germanium is a charge neutral impurity in silicon that significantly reduces the diffusion motion of other impurity dopants, such as As, P, In, and B in the regions of silicon where Ge resides in significant quantities (i.e. greater than 1E19 cm sup3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.