Robert Quinn
9Patents
4h-index
12Co-inventors
54Inventor score
Filing activity: Sep 5, 1975 → Jul 13, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6514788B2 | Method for manufacturing contacts for a Chalcogenide memory device | Electricity | 217 | Expired |
| US4776922A | Formation of variable-width sidewall structures | Emerging Cross-Sectional Technologies | 193 | Expired |
| US4506436A | Method for increasing the radiation resistance of charge storage semiconductor devices | Emerging Cross-Sectional Technologies | 39 | Expired |
| US4369072A | Method for forming IGFET devices having improved drain voltage characteristics | Electricity | 32 | Expired |
| US3975220A | Diffusion control for controlling parasitic capacitor effects in single FET structure arrays | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7271457B2 | Abrupt channel doping profile for fermi threshold field effect transistors | Electricity | 4 | Expired |
| US10282108B2 | Hybrid memory device using different types of capacitors | Physics | 2 | Active |
| US11853552B2 | Hybrid memory device using different types of capacitors | Physics | 0 | Active |
| US11068166B2 | Hybrid memory device using different types of capacitors and operating method thereof | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.